**Micron Introduces Second-Generation HBM3 DRAM with Advanced Semiconductor Process**
**Introduction**
Since their introduction in 2013, High-Bandwidth Memory (HBM) stacks have become a vital component in high-performance CPUs, GPUs, and FPGAs. Micron Technology, Inc. is now entering the HBM3 race with its second-generation HBM3 DRAM memory stack. This article explores Micron’s new HBM3 design, its benefits, and its potential impact on GenAI, DL, and HPC applications.
**Micron’s Second-Generation HBM3 DRAM**
Micron’s second-generation HBM3 DRAM adheres to the semiconductor industry’s “bigger, better, faster” mantra. It integrates higher-density DRAM die, allowing for a 50 percent increase in capacity compared to existing HBM3 DRAM from other memory vendors. Additionally, Micron’s HBM3 Gen 2 offers 2.5x better performance/power ratings and a 50 percent faster speed of 1.2Tbytes/second. This combination of increased capacity, improved performance, and faster speed positions Micron’s HBM3 Gen 2 at the forefront of the DRAM industry.
**HBM Technology: A Chiplet Skyscraper**
HBM technology consists of stacked memory chiplets, resembling a chiplet skyscraper. Each HBM stack comprises a logic die that houses a system interface and DRAM control, along with multiple DRAM die stacked on top. This entire stack is integrated into an IC package alongside larger semiconductor die and smaller chiplets. Previous generations of HBM have been incorporated into server CPUs, FPGAs, and GPUs from various industry leaders like AMD, Intel, and Nvidia. For example, AMD’s MI300X GPU, announced in June, utilizes HBM technology.
**Micron’s Entry into the HBM3 Race**
Micron enters the HBM3 race with its “second-generation” HBM3 design based on a faster, denser, and more advanced semiconductor process node. This design leverages Micron’s 1β process technology, announced last year, which increases DRAM bit density by 35 percent and decreases power consumption by 15 percent compared to the company’s 1α node. Micron plans to use this process node not only for manufacturing DDR5 and LPDDR5 DRAM but also for its HBM3 stacks’ DRAM die.
**Enhanced Performance and Higher Bit Density**
Micron’s second-generation HBM3 stack achieves 2.5x more performance for the same power consumption as an HBM2 stack. It also offers 50 percent faster data-transfer rates. The use of the 1β process node enables higher bit density, allowing the fabrication of 24Gbyte HBM3 stacks with one logic die and eight DRAM die. In comparison, a competitor’s HBM3 stack requires twelve DRAM die to achieve the same bit capacity. Micron even plans to introduce its own HBM3 stacks with twelve DRAM die per stack, accommodating 36Gbytes within the HBM3 standard’s 11x11mm footprint.
**Impact on GenAI, DL, and HPC Applications**
HBM3’s faster and larger memory capacity is particularly beneficial for companies utilizing GenAI, DL, and HPC applications. As the demand for large language models (LLMs) in GenAI applications grows, the available memory is often insufficient, hindering training cycles. Memory bandwidth has become the bottleneck for these applications. Micron’s Gen 2 HBM3 memory stack addresses this issue by providing additional fast memory, speeding up GenAI training cycles and benefiting DL and HPC applications.
**Future Prospects and Availability**
Micron has already shipped samples of its Gen 2 HBM3 memory stack to at least one customer, indicating that these memory stacks could soon be integrated into future CPUs, GPUs, and FPGAs. TIRIAS Research expects that devices incorporating Micron’s HBM3 technology will start to appear by the end of this year or early in 2024.
In conclusion, Micron’s second-generation HBM3 DRAM brings advanced semiconductor process technology to the HBM3 race. With increased capacity, improved performance, and faster data-transfer rates, Micron’s HBM3 Gen 2 offers significant benefits for GenAI, DL, and HPC applications. As the demand for faster and larger memory continues to grow, Micron’s HBM3 technology is poised to make a significant impact in the industry.
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